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We report a study of proton irradiation effects on the luminescence of self-assembled InAs quantum dots (QDs) embedded in an AlAs/GaAs short-period superlattice structure. As opposed to the QDs grown in a GaAs thin film, the QDs embedded in an AlAs/GaAs superlattice structure were found to exhibit much higher photoluminescence (PL) degradation resistance to proton irradiation. For example, at the...
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