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Electrical, electro-optical, mechanical and microstructural characterizations explain why the leakage currents in advanced Cu/ultra-low K interconnects can change from bulk (3D) to mostly interfacial (2D) above 150degC. A physical model consistent with all these results is proposed
The dielectric properties of porous ULK/Cu interconnects designed for sub 65nm nodes are degraded at high bias-stress. The resulting increase of dielectric constant and defect density can be estimated from the Poole-Frenkel modeling of the leakage currents above 1MV/cm. More generally, the porous SiCOH dielectric materials showing this transport mechanism appear to be inherently less reliable when...
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