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CVD-Ru based reflow Cu scheme demonstrates robust gap fill performance at 10nm and 7nm node equivalent patterns. Potential EM and TDDB reliability concerns associated with Ru CMP are identified and successfully addressed by the application of new processes and materials. This suggests our proposed scheme can be one of promising candidates for 10nm node logic device and beyond.
It is possible to overcome Cu void issues beyond 10nm node device by adapting CVD-Ru liner instead of conventional PVD Ta liner. However, CVD Ru liner integration degrades TDDB performance without optimizing its scheme. In this paper, superior gap-fill performance without TDDB performance degradation will be described in our optimized integration scheme along with a proposal for the mechanism of TDDB...
In this talk we will discuss the modeling of large-area organic solar cells. Degradation of the performance with increased area is observed and analyzed in terms of the power loss density concept. The equivalent circuit model is used to verify that a change in power loss density (or RSA) can have a strong influence on device performance. The limited sheet resistance of ITO is found to be one of the...
We demonstrate that platinum nanorods across the gap of a nanoresonator shift or overdamp the resonance depending on the rod-size. Moreover, what is striking is that the thinner nanorods almost completely turn off both the fundamental and higher mode resonances, analogous to the pinch harmonics.
We observe that rectangular holes fabricated in a gold film with a sub-skindepth thickness show blue-shifted resonance frequencies as the width increases. For rectangular holes on a finite substrate its thickness and the hole width are crucial factors determining the resonance frequency.
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