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The amount of tensile strain introduced into QWs and the optimum QW structure are evaluated for low-threshold operation of AlGaInP LDs in the wavelength range 630-640 nm. Very low threshold current of 32 mA under CW operation at 20 degrees C is achieved in an index-guided SQW LD emitting at 632 nm.<<ETX>>
A low threshold current of 47 Ma at 20 degrees C has been obtained in a tensile-strained index-guided AlGaInP LD emitting at 625 nm, which has an active region consisting of five 8 nm thick QWs with a lattice mismatch of -0.9%. It is shown that optimisation of the tensile-strained QW structure is very useful in improving the performance of AlGaInP LDs at wavelengths shorter than 630 nm.<<ETX>>
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