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A unified model made up of I-V, C-V, and I/sub sub/-V analytical models with tens of model parameters is proposed. The model parameters are given by formulas that each include a geometry (channel-length) effect. Experimental results show an accuracy of 1% for the I-V model and 10% for the C-V model. A 1.0- mu m CMOS inverter has been simulated and the results verified by experiments. Good agreement...
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