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This paper proposes a Gamma-based state space model to predict engineering asset life when multiple degradation indicators are involved and the failure threshold on these indicators are uncertain. Monte Carlo-based parameter estimation and model inference algorithms are developed to deal with the proposed Gamma-based state space model. A case study using real data from industry is conducted to compare...
An on-chip reliability monitor capable of separating the aging effects of HCI, BTI, and TDDB with sub-ps precision is presented. A pair of stressed ring oscillators is implemented in which one ages due to both BTI and HCI, while the other suffers from only BTI. Frequency degradation is monitored with a beat frequency detection system achieving sub-μ s measurement times. Measurement results are presented...
We investigated the effects of Mg dopant on the degradation of AlInGaN-based light emitting diodes (LEDs) and laser diodes (LDs) with InGaN multi-quantum wells (MQWs). Photoluminescence (PL) intensity of InGaN MQWs was significantly decreased with increasing the Mg intentional doping process in InGaN active region, indicating that Mg dopant could degrade the optical quality of InGaN MQWs. From secondary...
Negative Bias Temperature Instability (NBTI) is one of the most critical device reliability issues facing scaled CMOS technology. In order to better understand the characteristics of this mechanism, accurate and efficient means of measuring its effects must be explored. In this work, we describe an on-chip NBTI degradation sensor using two delay-locked loops (DLL). The increase in PMOS transistor...
The pH dependency of cell growth and human epidermal growth factor (hEGF) production was studied with a recombinant Hansenula polymorpha strain. Maximum specific growth rate and apparent specific production rate of hEGF was highly dependent on culture pH over the range of 4.0-7.0. The optimal pH for the fastest growth was 5.0 and for the apparent production of hEGF 6.0. A simple kinetic model considering...
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