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We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +∼2.5V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the...
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