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Time-resolved synchrotron X-ray scattering studies are presented of the faceting kinetics of stepped silicon surfaces misoriented by 2.1 o and 1.3 o from the cubic [113] direction towards the [001] direction. Following a quench from the high-temperature one-phase region of the orientational phase diagram into the two-phase coexistence region, originally-uniformly-distributed steps...
An X-ray scattering study is presented of the orientational phase diagram of Si surfaces misoriented by up to 5.2° from the cubic [113] direction towards [111], and for temperatures between 300 and 1500 K. At the highest temperatures (above 1200 K), the surface is uniformly stepped. In this region, the intensity of near-specularly scattered X-rays increases with decreasing temperature, suggesting...
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