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Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characteriza- tion data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different...
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