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A 3.3V 8Gb NAND flash memory with a synchronous double-data-rate (DDR) interface is designed and fabricated using 3M 50nm technology to meet the requirements of the markets. This paper achieves a NAND flash program throughput of 100 MB/s with quad-plane operation, which is 5x previously reported. I/O read/write throughput of 200MB/s is achieved using a newly developed DDR interface and data path....
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