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In this work, high‐voltage photoconductive semiconductor switches (PCSSs) with inter‐digitated contact electrodes are directly fabricated on semi‐insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼1010 Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the...
GaN‐based metal‐semiconductor‐metal ultraviolet photodetectors (PDs) are fabricated on bulk GaN substrate. The dislocation density of the homoepitaxial layer characterized by cathodoluminescence mapping technique is ∼5×106 cm‐2. The PDs exhibit ultra‐low dark‐current of <5 pA at room temperature under 15 V bias, with an ultraviolet/visible rejection ratios up to 5 orders of magnitude. Even at a...
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