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Transparent diodes formed by a heterojunction between p‐type CuS–ZnS and n‐type ZnO thin films were fabricated by sequential chemical bath deposition and sol‐gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution‐processed diodes measured at a similar...
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