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In this paper, we studied the effect of mushroom-mesa structure on vertical incidence PIN photodiodes based on theory and experiments. A novel mushroom-mesa vertical incidence photodiode was fabricated. The 20-um-diameter mushroom-mesa photodiode with a 0.5-um absorption layer achieved a 3dB bandwidth of 24.1 GHz, which increased 39.3% compared with PIN photodiodes.
In this paper, the high-speed modified uni-traveling-carrier photodiode (MUTC-PD) was designed and fabricatedfor low reverse bias. The 3-dB bandwidth and responsivity of MUTC-PD with 24-μm mesa diameter at 1-V reverse bias is 22.5 GHz and 0.22 A/W at the wavelength of1550 nm, respectively. The dark current of the device is less than 4nA at 3.3 V reverse bias. The fabricated device can achieve high...
A novel grating-integrated mushroom-mesa photodetector is demonstrated, which uses an undercut mushroom-mesa structure and a grating focusing reflector to increase bandwidth and efficiency simultaneously. The mushroom-mesa p-i-n structure is heterogeneously integrated on a non-periodic concentric circular subwavelength grating by a wafer bonding process. High speed can be obtained by using a mushroom-mesa...
We design a kind of mixed high-index-contrast subwavelength grating/distributed Bragg reflector (HCG/DBR) multilayer reflectors. The mixed HCG/DBR multilayer reflectors provide a broadband high reflectivity characteristic with several pairs which can replace conventional DBRs of InP-based materials. By applying the epitaxial lateral overgrowth (ELO), the design structure turns into a virtual InP substrate...
A new back-illuminated uni-traveling-carrier photodiode (UTC-PD) is designed for long-wavelength applications in this paper. This device design incorporates dual absorption regions with conventional UTC-PDs, simultaneously by adopting a cliff layer in the collection layer to obtain high efficiency and high speed. Theoretical and simulation study indicate that the responsivity of the 14 µm2 active...
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