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This work presents a model that allows to explain the resistance variability of OxRAM devices, both in high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution. The model is able to capture both cycle-to-cycle...
In this paper we present a high speed dynamical characterization of a HfO2-based Resistive Random Access Memory (RRAM) device. Thanks to a dedicated integrated device, in one Transistor one Resistor (1T1R) configuration, featuring an electrical pad between the selector and the memory cell, we provide very accurate programming measurements at the nanosecond range. The low parasitic capacitance (4pF)...
In this work, a model is proposed to explain the variability of OxRAM devices, both in their high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution.
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