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This work describes a statistical model for the C-V global variability of 28 nm FD-SOI using the sensitivities of the capacitance to each process parameter calculated using Leti-UTSOI compact model. The percentage contribution of each process parameter to the total C-V variation is explored to identify the dominant source of variation at different bias conditions. The proposed model provides an alternate...
This paper presents a new methodology to characterize the GaN buffer doping level which is a critical parameter for epitaxial fabrication of GaN wafers. As demonstrated in this study, its characterization is challenging due to parasitic effects. Capacitance-Voltage (C-V) measurements are carried out on a Metal Insulator Semiconductor (MIS) structure with a gate on Al2O3 dielectric using a novel configuration...
In this work, robust methodologies for parameter extraction using split C-V measurements in FD-SOI structures are developed. These methods enable an automated and robust extraction procedure which is very important from an industrial perspective. The accuracy and robustness of the improved methods are verified using statistical measurements carried out on 28 nm FD-SOI devices and comparison with physical...
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