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In this paper, a broadband fourth-harmonic mixer based on gallium arsenide (GaAs) Schottky barrier diodes working at 80–100GHz is designed. This fourth-harmonic mixer is simulated and attains low conversion loss below 14dB in the whole band. The design process and simulation results are explained in detail.
This letter presents the design of a wide band 8th harmonic mixer, using an anti-parallel pair of planar Schottky GaAs flipp-chip diodes fabricated onto a suspended quartz-based microstrip circuit. Simulations predict conversion losses are well below 23dB from 330 to 500GHz. The design offers an solution to simplify the local oscillator signal generation and realize the goal of low frequency conversion...
In this paper, a 420GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. We combine the diode 3D model, nonlinear model and passive circuit by field-circuit method, then optimize the circuit through harmonic balanced method, finally study the GaAs monolithic integrated 420GHz sub-harmonic mixer. Simulated results for the mixer achieved DSB conversion loss...
In this paper, a 340GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. The mixer circuit is fabricated on a 12um GaAs substrate included planar Schottky diode in a balanced configuration, the passive RF/LO and IF matching networks, filtering circuits, as well as transitions from waveguide to suspended micro-strip. Simulated results for the 340 GHz mixer...
This paper describes the design, simulation and measurement of a Schottky sub-harmonic mixer working around 370GHz. The device is based on an anti-parallel pair of planar Schottky diodes flip-chip mounted onto a single quartz-based microstrip circuit. The best DSB noise temperature of about 3500K is measured with LO at 184.5GHz. The performance of the mixer at room temperature and the liquid nitrogen...
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