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The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide traps, especially at high transverse electric field. These created defects degrade the cell endurance...
Flash memory has recently become the fastest growing segment in the semiconductor memory market. This is due to its high scalability which has already reduced cost/Megabit below that of dRAM's. However, Flash cells based on tunnelling require relatively high voltages to be generated on chip, while the channel-hot-electron (drain) injection (CHEI) alternative consumes a high current for programming,...
In this paper, an analytical model is described which can be used for the optimization of High Injection MOS devices [1,2]. The model determines the unknown potentials inside the split gate structure and therefrom calculates the transient characteristics using the Lucky Electron Model (LEM) [3]. In the high injection regime, the model shows an excellent agreement with measured characteristics. This...
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