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This study aims to understand the potential of bulk FinFET technology from the perspective of sub- and near-threshold logic circuits down to 100-mV bias voltage. Measurements are performed on bulk FinFETs with a channel length of 60 nm, a fin height of 33 nm, and a fin width of only 14 nm and with a high- /metal-gate stack having an equivalent thickness in inversion of 1.6 nm. For comparison purposes,...
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