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The full spectrum from attachment‐kinetic‐dominated to diffusion‐controlled modes is revealed for the cases of monolayer h‐BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well‐defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h‐BN flakes into continuous structures or film are first observed...
On page 4858, P. Hu, Y. Liu, and co‐workers report the full spectrum from attachment‐kinetic‐dominated to diffusion‐controlled modes for the cases of monolayer h‐BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well‐defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h‐BN flakes into continuous...
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