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Single-phase nanocrystalline thin films of Er2O3 (440) has been first prepared using Si (100) substrates by ion beam sputter deposition at 700°C at a pressure of <10−7Torr and in-situ annealing at 750°C at a pressure of <10−9Torr. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the Er2O3 thin films. The epitaxial...
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