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We present an InP-based p-i-n photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2μm detection. The fabricated photodiode shows a responsivity of 0.24 A/W at 2μm, with dark current as low as 1μA at −2V, and 3dB-bandwidth of 2 GHz under 1.55μm optical illumination.
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