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This paper studies the electrostatic discharge (ESD)-protected RF low-noise amplifiers (LNAs) in 65-nm CMOS technology. Three different ESD designs, including double-diode, modified silicon-controlled rectifier (SCR), and modified-SCR with double-diode configurations, are employed to realize ESD-protected LNAs at 5.8 GHz. By using the modified-SCR in conjunction with double-diode, a 5.8-GHz LNA with...
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