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Different ESD design topologies suitable for microwave/millimeter wave low-noise amplifiers (LNAs) are reviewed, and the design tradeoffs and limitations of each topology are also discussed. In addition, a V-band LNA using the proposed Pi-type ESD block is demonstrated in 65-nm CMOS. A series ESD inductor together with two shunt ESD diodes and an bonding (probing) pad form a Pi-type network, acting...
This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic...
This paper presents an ESD-protected V-band (f0 at 58 GHz) low-noise amplifier (LNA) in 65-nm CMOS. Instead of using the conventional diode-based RF ESD design, a high current capability spiral inductor and a high breakdown MOM capacitor are employed as effective bi-directional ESD protection network, and also as part of the input matching by the co-design approach. The measured results demonstrate...
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