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Ultra‐thin and dense sol‐gel metal oxide films for gate dielectric layers in large‐area printed metal oxide and organic thin‐film transistors are reported by a simple wire bar coating method. Y.‐Y. Noh, M.‐H. Yoon, and co‐workers describe this method on page 5043.
Ultrathin and dense metal oxide gate dielectric layers are reported by a simple printing of AlOx and HfOx sol–gel precursors. Large‐area printed indium gallium zinc oxide (IGZO) thin‐film transistor arrays, which exhibit mobilities >5 cm2 V−1 s−1 and gate leakage current of 10−9 A cm−2 at a very low operation voltage of 2 V, are demonstrated by continuous simple bar‐coated processes.
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