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Low-frequency noise (LFN) in double-gate (DG) In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) is studied to investigate the origin of performance improvement. We found that thinning down the IGZO film enhances such improvements. With 7-nm IGZO, the mobility is raised by a factor of 3.77, and the subthreshold slope is reduced to 0.17 V/decade from single-gate to DG mode. Device simulations show that...
We demonstrate a large area, a simple wire bar-coated polymer FETs array and ICs. Both a highly crystalline conjugated polymer and very smooth insulating polymer layers were formed by the consecutive wire bar-coating process over 4 inch sized substrate within a short processing time for applications of the active and dielectric layer of OFET array and ICs. The bar-coated top-gate/bottom-contact (TG/BC)...
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