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On page 5875, J. H. Cho and co‐workers demonstrate a new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene–organic‐semiconductor–metal heterostructures and ion gel gate dielectrics. The devices show well‐behaved p‐ and n‐type characteristics under low‐voltage operation (<1 V), yielding high current densities (>100 mA cm−2) and on–off...
A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene–organic‐semiconductor–metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well‐behaved p‐ and n‐type characteristics under low‐voltage operation (<1 V), yielding high current densities (>100 mA cm−2) and on/off current ratios (>103).
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