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Transmission electron microscopy (TEM) coupled with electron energy loss spectroscopy (EELS), and first principles calculations of EEL spectra were utilized to elucidate the relationship between the microscopic structure and the electrochemical properties of heavily boron-doped diamond (h-BDD). The electrochemical properties of h-BDD containing 1 at.% and 3 at.% boron are very different. TEM observations...
The effects of sp2‐bonded carbon impurities on the electrochemical properties of boron‐doped diamond were investigated in moderately ([B] < 1020 cm−3) and heavily ([B] > 1021 cm−3) boron doping levels. Significant influences of sp2‐bonded carbon impurities, which show glassy carbon‐like electrochemical properties after anodic oxidation, were observed in heavily boron‐doped diamond. This indicated...
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