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We report the effect of a Ta/TaN/SiCN tri-layer barrier on the electrical properties and thermal stability of single damascene (SD) lines for Cu-ultra low k (2.3) integration. It was found that by incorporating a thin SiCN layer between the Ta/TaN barrier and ultra low k material, the leakage current can be significantly reduced and the breakdown voltage can be enhanced. A thermal treatment at 200°C...
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