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This paper deals with the susceptibility to radio frequency interference of smart power integrated circuits. A method to perform simulations aimed at evaluating the performance of subcircuits included in a more complex IC in the presence of EMI is presented. Referring to this, the behaviour of a current sensor included into a high-side power switch during DPI test is investigated. The results of simulation...
The present paper discusses the susceptibility of MOS power transistors to electromagnetic interference affecting the drain terminal. To this purpose, the low side configuration is considered and susceptibility analyses are carried out referring to simple small-signal models of the MOS transistor. The prediction of the susceptibility levels obtained in this way are validated through time domain simulations...
The paper deals with the electromagnetic emissions of smart power system on chips (SoCs). The architecture of common integrated smart-power systems is described, hence the propagation of core blocks switching noise through the silicon substrate is discussed referring to simple equivalent circuits. Based on that, a new grounding scheme to reduce substrate voltage bounce is presented in detail and its...
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