The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We are developing monolithic pixel sensors based on a 0.2 µm fully-depleted silicon-on-Insulator (SOI) technology. The major issue in applications them in high-radiation environments is the total ionization damage (TID) effects. The effects are rather substantial in the SOI devices since the transistors are enclosed in the oxide layers where generated holes are trapped and affect the operation of...
We have been developing a monolithic active pixel sensor with the 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, i.e. SOIPIX, for the X-ray imaging spectroscopy on future astronomical satellites. SOIPIX includes a thin CMOS readout layer and a thick high-resistivity Si-sensor layer vertically on a single chip, which would provide advantages in capabilities of direct and flexible readout circuitries...
The earlier long-pulsed green laser annealing system had the big issue: a deep n-type layer, namely, a field stop (FS) layer in IGBT's structure was not sufficiently activated when thick wafers with large heat capacity were used. In order to cope with the big issue, we developed the thermal assist type annealing system in which a long-pulsed green laser (λ:515nm) was combined with a near infrared...
A new techniques in a Silicon-on-Insulator (SOI) process for pixelated radiation detectors are developed. One is called buried p-well (BPW) to suppress back gate effect, and the other is vertical (3D) integration technology to achieve much higher density. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light,...
High energy physics experiments at future particle accelerators set very demanding requirements on the performance of sensors and readout electronics. In these applications, silicon pixel detectors have to integrate advanced functionalities in the pixel cell itself, such as amplification, filtering, discrimination, time stamping, zero suppression and analog-to-digital conversion. This paper discusses...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.