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Gate-all-around p-i-n silicon nanowires (NW) diodes with effective nanowire diameter from 15 nm down to 4 nm (±1.3 nm) were fabricated to enable interface state density (Nιι) measurements using the charge pumping (CP) method. The Nη of the NWs was also measured by the conductance method and was in good agreement with the CP method. The linear relation between the CP current and the pulse frequency...
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