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Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium with effective plasma frequencies above 60 THz, corresponding to wavelengths below 5 μm. This technology paves the way for mid-infrared nanoplasmonics with application in integrated telecommunication systems and enhanced molecular sensing in the so-called vibrational fingerprint spectral region [1].
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of...
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid infrared. The nanostructures are fabricated on silicon substrates from heavily doped germanium films with a plasma frequency of 30 THz, equivalent to a wavelength of 10 μm. Illumination with ultrashort pulses at 10.8 μm produces coherent emission at 3.6 μm via third-harmonic generation.
Germanium nanoantennas are activated by triggering a mid-infrared plasma response via ultrafast interband excitation. Femtosecond control of the intrinsic semiconductor allows complete activation of the plasmonic resonance for hundreds of picoseconds.
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