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Inorganic nanomaterials such as nanowires (NWs) and nanotubes (NTs) are explored for future flexible electronics applications due to their attributes such as high aspect ratio, enhanced surface-to-volume ratio, prominent mobility and ability to integrate on non-conventional substrates. Device performance of semiconducting NWs are demonstrated to be superior compared to the organic counterparts. Among...
GaAs nanowires (NWs) growth kinetics by Ga-assisted chemical beam epitaxy on Si(111) substrates is studied as a function of the initial Ga catalyst dimensions and growth parameters such as substrate temperature and V/III flux ratio. The preparation method for substrates is optimized in order to obtain a surface oxide with a thickness around 0.5 nm, allowing the decomposition of Ga metalorganic precursor...
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