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AlN films with thickness from 100 to 1000nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique...
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