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Recent challenges facing research and development on high-speed devices and their integration for 100 GbE are explained. The low-power-consumption technology and optical-integration technology are considered to be the key solutions to face these challenges.
We have developed all-silicon based light-emitter for optical interconnections. The relatively short florescent lifetime of 4.2 ns in a silicon quantum well makes direct modulations at 10 Mbps accessible for low-end high-volume consumer applications.
When the polarization of terahertz (THz) light is measured with THz time-domain spectroscopy (TDS) by switching the polarization angle of THz light, it is preferable that intensities of pump and probe lights are almost constant. Pump and probe lights, which are produced through dividing a femto second (fs) laser pulses by a beam-splitter, must be correlated with orientations of THz emitter and detector...
We developed a high-speed (over 30 GHz) and high-responsivity (nearly 0.8 A/W) back-illuminated PD with a newly developed high reflective reflector, and successfully demonstrated an error free 25-Gbps 10-km SMF transmission.
A highly efficient (2 V peak to peak for 22 dB extinction ratio) and extremely low-chirp (<64 pm) integrated electroabsorption modulator/DFB laser is demonstrated by reducing both electrical and optical crosstalk between the modulator and the laser. The device allowed 2.5 Gbit/s penalty-free transmission over repeaterless 200 km-long 1.3 mu m-optimised singlemode fibre.<<ETX>>
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