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Recent progress in developing 1.3-um InGaAlAs-MQW directly modulated lasers is reported. Uncooled 25-Gbps operations over a wide temperature range were demonstrated. Clear eye opening up to 100 °C % was successfully obtained.
We have developed all-silicon based light-emitter for optical interconnections. The relatively short florescent lifetime of 4.2 ns in a silicon quantum well makes direct modulations at 10 Mbps accessible for low-end high-volume consumer applications.
Circular, narrow beam emission of a lens-integrated surface-emitting laser operated at 1.3-mum wavelength was demonstrated. The laser consists of a distributed feedback laser cavity monolithically integrated with an etched 45deg total reflection mirror and an etched InP lens. The profile of the etched InP lens was estimated to be a highly symmetrical parabolic shape that is ideal for the collimation...
High-coupling-efficiency high-reliability hetero-material integration of InGaAlAs-based and InGaAsP-based optical components on a single InP substrate was achieved. A butt-jointing process with in situ cleaning was used to integrate an InGaAlAs-based component and an InGaAsP-based component. Optical-coupling efficiency at the butt-jointed interface of a novel multiple-butt-jointed laser was quantitatively...
A novel 1.3-mum surface-emitting laser integrated with a monolithic InP bulk lens was demonstrated. The laser achieved very narrow far-field angles of around 2deg leading to a -2.7 dB direct coupling to a single-mode fiber.
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