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We have developed all-silicon based light-emitter for optical interconnections. The relatively short florescent lifetime of 4.2 ns in a silicon quantum well makes direct modulations at 10 Mbps accessible for low-end high-volume consumer applications.
95degC, 25-Gbps direct modulation of a high-power (>15 mW) 1.3-mum-InGaAIAs-DFB laser is developed for the first time. The device will be a key for 4-channel CWDM uncooled light-sources used in the lower-power-consumption 100-GbE subsystems.
A novel 1.3-mum surface-emitting laser integrated with a monolithic InP bulk lens was demonstrated. The laser achieved very narrow far-field angles of around 2deg leading to a -2.7 dB direct coupling to a single-mode fiber.
We have observed net optical gain by current injections to ultra-thin Si embedded in a resonant optical cavity. The cavity consists of a dielectric waveguide fabricated by CMOS and MEMS process. The photoluminescence (PL) spectra show narrow resonances peaked at the designed wavelength, and the electroluminescence (EL) intensity increases super-linearly with currents. The comparisons with first principle...
Direct modulation at 40 Gb/s of a 1.3-mum InGaAlAs distributed feedback ridge waveguide laser is experimentally demonstrated. By combination of the high differential gain of an InGaAlAs multiquantum well active layer, a short cavity length of 100 mum, and a low-resistance notch-free grating, it achieves high bandwidth of 29 GHz and high-extinction ratio of 5 dB at 40-Gb/s modulation. Moreover, the...
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