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We have developed all-silicon based light-emitter for optical interconnections. The relatively short florescent lifetime of 4.2 ns in a silicon quantum well makes direct modulations at 10 Mbps accessible for low-end high-volume consumer applications.
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. To realize the high-speed, small-footprint, low-power-consumption and cost-effective semiconductor light source, we have investigated the several key technologies. Newly developed 1.3 mum range 25 Gbps and 43 Gbps EA/DFB laser showed a good transmission performance over 10 km single mode fiber...
High-coupling-efficiency high-reliability hetero-material integration of InGaAlAs-based and InGaAsP-based optical components on a single InP substrate was achieved. A butt-jointing process with in situ cleaning was used to integrate an InGaAlAs-based component and an InGaAsP-based component. Optical-coupling efficiency at the butt-jointed interface of a novel multiple-butt-jointed laser was quantitatively...
An in-situ cleaned and regrown 1.3-/spl mu/m InGaAIAs buried heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 2000-hour aging test.
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