The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper investigates the application of gate-all-around (GAA) vertical nanowire transistors (VNWFET) as an access element in future non-volatile memories (NVM) such as resistive random-access memory (RRAM), phase-change random access memory (PCRAM) and spin-torque-transfer memory (STT-RAM or MRAM). We primarily choose direct-current (DC) parameters ION and ION/IOFF as our figure of merit (FOM)...
We propose a novel highly scalable source-drain-junction-free field-effect transistor that we call the bulk planar junctionless transistor (BPJLT). This builds upon the idea of an isolated ultrathin highly doped device layer of which volume is fully depleted in the off-state and is around flatband in the on-state. Here, the leakage current depends on the effective device layer thickness, and we show...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.