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Ge is an indirect band gap material. The band structure of Ge is a strong function of strain and alloy composition, and a transition from an indirect to a direct band gap has been observed for y∼6–10% for relaxed Ge1_ySny indicating the possibility of widespread applications of Ge-based photonic devices. The pseudomorphic nature of the Ge-based alloy layer on a substrate is important to keep dislocation...
In recent years, magnetocaloric materials have drawn tremendous attention for their giant mageto-caloric effect (GMCE). GMCE-based magnetic refrigeration provides one of the most promising technologies to replace vapor-compression refrigeration [1, 2]. Among the novel magnetocaloric materials, MnFePAs has been regarded as an ideal MCE system. However, the toxicity of As limits the use of these materials...
The SnPb solder ball was reflowed on the Cu film in a flow of reducing gas, and the reactive spreading process was in situ recorded by a CCD camera. On the thicker Cu films, it was observed that dewetting did not happen even if the Cu6Sn5 intermetallic compounds spalled into the liquid solder. However, on the thinner Cu films, dewetting would occur when the liquid SnPb solder consumed the underneath...
The sputter-deposited Cu thin film, coated with a thinner gold layer, was prepared into the butterfly pattern with alternating zones beween Cu thin film and Si. The eutectic SnPb solder balls with different sizes were reflowed on the butterfly pattern. As a result, the liquid solder would be selectively retained on the Au/Cu film zones. At the same time, under the energy minimization control, the...
The complex conductivity of CVD-grown graphene films between 0.1 and 1.6 THz are obtained using a non-destructive THz etalon transmittance technique. Critical parameters such as ionized-impurity scattering width and chemical potential are derived. The technique can be extended to extract the complex ac conductivity parameters of other thin conducting films or 2DEG materials with high sheet conductance.
This paper presents challenges encountered in the fabrication of high aspect ratio (AR) via middle, Through Silicon Vias (TSV), of 3µm top entrant critical dimension (CD) and 50µm depth. Higher AR TSV integration is explored due to the lower stress influence of TSVs observed in adjacent CMOS devices. [1]
The SnPb solder ball was reflowed on the Cu film in a flow of reducing gas, and the reactive spreading process was in situ recorded by a CCD camera. On the thicker Cu films, it was observed that dewetting did not happen even if the Cu6Sn5 intermetallic compounds spalled into the liquid solder. However, on the thinner Cu films, dewetting would occur when the liquid SnPb solder consumed the underneath...
The sputter-deposited Cu thin film, coated with a thinner gold layer, was prepared into the butterfly pattern with alternating zones beween Cu thin film and Si. The eutectic SnPb solder balls with different sizes were reflowed on the butterfly pattern. As a result, the liquid solder would be selectively retained on the Au/Cu film zones. At the same time, under the energy minimization control, the...
In this paper, we consider the design of an optimum beamforming and scheduling scheme at a multi-antenna UAV central node (UAV-C), which collects information from several other single-antenna distributed UAV nodes (UAV-D). When the channels between UAV-C and UAV-D are both perfectly known, the optimum strategy is to employ minimum mean-square-error (MMSE) beamforming in conjuction with a computationally...
Solar cell manufacturers across the world are working to find innovative ways to reduce cost per installed watt of photovoltaic energy generation in order to achieve grid parity. Some of these approaches involve the use of revolutionary cell architectures such as metal wrap-through (MWT) [1], PERC cells, local back surface field (BSF) [2] and selective emitter among others. Many of these new approaches...
Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K center) In SiON. The traps' location...
This paper describes two fabrication techniques-dry and wet etching for microstructured optical arrays (MOAs). The MOAs consist of arrays of channels deep etched in silicon. They use grazing incidence reflection to focus the X-rays through the consecutive aligned arrays of channels, ideally reflecting once off a vertical and smooth channel wall in each array. The MOAs were proposed by the Smart X-ray...
Role based access control (RBAC) is a powerful security administration concept that can simplify permission assignment management. Migration to and maintenance of RBAC requires role engineering, the identification of a set of roles that offer administrative benefit. However, establishing that RBAC is desirable in a given enterprise is lacking in current role engineering processes. To help identify...
This paper describes a biaxial-uniaxial hybridized strained CMOS technology achieved through selective uniaxial relaxation of thick SSOI, dual-stress nitride capping layer, and embedded SiGe source/drain. Through novel strain engineering, nFET/pFET Idsat enhancements as high as 27%/36% have been achieved for sub-40nm devices at 1V with 30% reduction in gate leakage current, while introducing minimum...
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