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Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K center) In SiON. The traps' location...
Negative Bias Temperature (NBT) degradation in PMOS device with ultrathin SiON gate dielectric has been investigated at the temperature ranging from 218 K to 463 K. It is found that the degradation has different time-dependence behavior and activation energy above and below 268 K, evidencing two mechanisms in NBT degradation. One is related to interface state traps suggested in classic R-D model with...
Summary form only given. The thin detector foil of the widely used metal resistive-type bolometer is composed of an absorber, a substrate and two meander resistors. The two resistors on the detector foil together with other two identical ones coated on a reference foil form a Wheatstone bridge. Absorption of plasma radiation causes a temperature-induced resistivity increase of the detector foil, driving...
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