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GaP(001), (111)A, and (111)B surfaces treated by (NH 4 ) 2 S x solution have been studied by high-resolution X-ray photoelectron spectroscopy (XPS). The surfaces etched by acid solution have small amount of gallium and phosphorus oxides. The oxides grow after the (NH 4 ) 2 S x treatment. However, the oxide of the (111)B surface is found to be weak in...
Surface structures and electronic states of InAs(001) and (111)B passivated with sulfur have been studied by Auger electron spectroscopy, low-energy electron diffraction, ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and inverse photoemission spectroscopy (IPES). The sulfur-adsorbed (001) surface is reconstructed into the (1x1) and (2x1) structures at about 230 o ...
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