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In this paper, we first report a novel and highly manufacturable multi-level perpendicular magnetic tunnel junction (p-MTJ) with a single top-pinned layer and multiple barrier/free layers. In the proposed p-MTJ structure, all tunnel barriers and free layers lie under a thick pinned layer, which enables good resistance control and large coercivity due to the effect of small film roughness. We also...
Strain-engineering using the inverse magnetostrictive effect has been performed to improve the performance of spin transfer torque magnetoresistance random access memory (STT-MRAM). The thermal stability factor E/kBT has been enhanced by 40% without increasing a switching current by controlling the process-induced stress in a free layer in MTJ (magnetic tunnel junctions) with mechanically engineered...
Wafer-level hybrid copper/polymer bonding technology suitable for wafer-level 3D integration (called “thinning after bonding”) was developed. A damascene process is applied for fabricating copper pads. After chemical mechanical polishing (CMP), a globally flat bonding surface is obtained by co-planarization of copper and polymer during barrier CMP. The key to this co-planarization process is optimizing...
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