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A series of dilute InNSb films with different N composition were prepared at various growth conditions by RF-MBE. The film samples were characterized by Atom force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and room temperature Raman scattering spectroscopy, the measurements indicated that the InNSb films are of high crystalline quality and most of the N atoms are at the substituted...
Due to high mobility (1000-1500 cm/V2), high sheet charge density (~1013 cm-2), and high electron saturation velocity (~2.0times105 cm/s), AlGaN/GaN HFET's were shown to have great potential for linear operation in high dynamic range module. However, significant linearity degradation was found in practical devices compared to that predicted from theoretic derivation. In this work it is demonstrated...
HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated from traditional semiconductors such as GaAs and InP. Nitride-based HFET's can support drain bias voltages in the range of 40-50 V, and have been biased as high as 120 V using device designs that make use of field-plate technology. However,...
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