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This paper reports a novel inertial microswitch with synchronous follow-up compliant electrodes for extending output switch-on pulse width. The flexible movable electrode and stationary electrode are proposed to keep a continuous duration contact by double-stair and spring-shape structures, which can not only extend the output switch-on pulse width but also reduce the impact bounces. Then the inertial...
We have studied threading dislocations (TDs) in 4H-SiC by means of X-ray topography (XRT) taken under 6 equivalent g-vector of 11–28 and two different chemical etching methods. Threading screw and mixed-type dislocations (TSDs and TMDs) can be distinguished and the direction of the a-components of TMDs can be determined by XRT. Efforts have been made to examine if there are features of etch pits that...
Threading dislocations (TDs) in an HVPE-grown free-standing GaN substrate have been studied by means of the etch pit method using molten KOH+Na2O2 solution, cathodoluminescence (CL) mapping and transmission electron microscopy (TEM). We have focused on the correlation between (1) Burgers vectors of TDs, (2) their appearances as dark spots in CL image, and (3) geometries of corresponding etch pits...
Permanent magnet linear synchronous machines (PMLSMs) have attracted increasing interest due to their special merits, such as direct linear motion, fast dynamic response, simple system structure and so on.
Proportional hazard model (PHM) is a common reliability model in reliability engineering. This model considers the operating condition as covariates. The operating condition is assumed to affect the failure rate proportionally. In the state-of-art applications, this PHM is used as a data-driven model. Nevertheless, some literature argue the PHM has the advantage of physical explanation for its covariates...
Based on the selective area growth (SAG) technique, an enhancement mode GaN recessed gate MOSFET was fabricated successfully with negligible gate trapping effect, presenting an extremely small threshold voltage ($V_{\mathrm {th}})$ hysteresis of 50 mV at a gate bias swing up to 10 V. Compared with the larger $V_{\mathrm {th}}$ hysteresis of a recessed gate GaN MOSFET fabricated by dry-etching,...
High quality, epitaxial, AlGaAs and InGaP thin films have been grown by metal organic chemical vapor deposition (MOCVD) on flexible metal substrates using buffered GaAs on ion-beam textured epitaxial templates. The grown AlGaAs and InGaP films exhibit strong (00Î) orientation and sharp in-plane texture. We also report preliminary developments on AlGaAs/GaAs and InGaP/GaAs double heterostructures (DH)...
A new approach to the design and the realization of a broadband multilayer anti-reflection (AR) coating is proposed in this study. The binominal multi-section transformer is employed to efficiently determine the thickness and the refractive index of each matching layer, while those layers can be further realized by doping different fraction of subwavelength-size silicon powders (for relatively-high-index...
We report a design of small-core, multiple-layer Bragg waveguide for guiding the terahertz (THz) signal using TE01 mode, which is composed of alternating high-index dielectric (HDPE) and low-index dielectric (air). The propagation loss is less than 0.1 dB per centimeter ranging from 0.95 THz to 1.20 THz, which is better than that of the traditional metallic tube. Furthermore, a novel scheme is proposed...
The far-infrared properties of a newly grown crystal, BaGa4Se7, were investigated with a THz-TDS system. Refractive indices and absorption coefficients of this material between 0.1THz-1THz were obtained. The measured properties predicts potential application of BaGa4Se7 in THz-DFG. THz-DFG using BaGa4Se7 was analyzed theoretically and the phase-matching conditions were calculated. It seems that a...
High quality, epitaxial undoped, Zn- and Se-doped GaAs films have been grown by metal organic chemical vapor deposition (MOCVD) on flexible metal substrates using buffered Ge epitaxial templates. The GaAs films exhibit strong (400) orientation, sharp in-plane texture, strong photoluminescence and a defect density of ∼107 cm−2. Furthermore, the GaAs films exhibit hole and electron mobilities as high...
FinFET has become the mainstream logic device architecture in recent technology nodes due to its superior electrostatic and leakage control [1,2,3,4]. However, parasitic capacitance has been a key performance detractor in 3D FinFETs. In this work, a novel low temperature ALD-based SiBCN material has been identified, with an optimized spacer RIE process developed to preserve the low-k value and provide...
Meyer Burger develops a high-efficiency line concept with a silicon heterojunction (HJT) cell based module. This line produces 2400 6-inch busbarless cells per hour and includes cells and modules characterization. The underlying high-efficiency bifacial module technology relies on the Smart Wire Connection Technology (SWCT) and on a Glass-Glass (GG) module design. The SWCT and GG concepts have been...
This paper presents a new method to model a complex system with uncertain and dynamic information for fault diagnosis and reliability prediction. Some system is very complicated, and the relationships between components are also complex. In addition, the exact failure mode of each component may not always be known in many cases. What's mo re, the performance of the system is dynamic and changing with...
We report the observation of negative group delay in a simple anisotropic cylindrical waveguide in the millimeter-wave region. With a 45° linearly polarized input, a relatively broad band of negative group delay was observed with 3.57% bandwidth, where the maximum group advancement achieved was about 24 times greater than the luminal delay, implying a fractional advancement of 13.32%. The peak advancement...
We propose a design of small-core multiple-layer Bragg waveguide for guiding the THz signal by TE01 mode, which is composed of alternating un-doped silicon (high refractive index) and high-density polyethylene (low refractive index). The group velocity of the THz wave traveling inside this small-core waveguide slows down to below 0.5c, while the propagation loss is less than 0.3 dB per centimeter...
In this paper we propose a probabilistic generative model for the Ballistocardiogram (BCG), a physiological signal derived from the recoil of the body caused by the beating heart. The model uses a Gaussian process for the continuous BCG signal and an inverse Gaussian point process to model the latent discrete heartbeat sequence. Using this model artificial BCGs can be generated for the purpose of...
This paper investigates an analytical power loss modeling method applied to a three-phase voltage source inverter, aiming to obtain an accurate inverter loss without the need of extensive experimental measurement, under the context of inverter efficiency optimization. Modeling of semiconductor is achieved through analytical equations for conduction and switching losses in the MATLAB/Simulink environment,...
A new conventional magnets tokamak HL-2M (Ip < 3 MA, Bt = 2.4 T, R = 1.78 m, a = 0.65 m) will be built in Sout hwestern Institute of Physics (SWIP). The Ohmic Heating (O H) power supply feeds the OH coil, which may provide about 220kA. In order to make full use of the flux swing of OH coi l, 4-quadrant converter will be adopted. Both positive and ne gative converters are 12-pulse thyristor bridge...
In order to verify the feasibility of OH power supply design, simulation study based on Simulink is carried out. The simulation model includes 300MVA six-phase motor generator, transformers, converters, crowbar, cable and load. The models of transformers, converters and the control system are built in detail. The impedance of AC side includes the one of generator, transformers and cables are estimated...
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