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The DC and AC characteristics of a 30 V AlGaN/GaN HEMT was investigated by numerical simulations. By properly model the 2DEG in the AlGaN/GaN interface, we obtain a maximum transconductance of 221 mS/mm, a saturation current density of 1.28 A/mm, a specific Rdson of 2.5 mOmega-mm2, a specific Qgd of 0.62 nC/mm2 and the value of FOM of 1.6 mOmeganC. The comparison with of the state-of-the-art Si-LDMOS...
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