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A readout chip, consisting of 32×32 square cells, has been designed in a 65 nm CMOS technology. The circuit will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager, envisaged for applications to experiments at the next generation X-ray FELs. The pixel pitch is 110 μm, for a total area of about 16 mm2. Different solutions for the readout channel,...
This work presents the characterization results of the first prototype of a readout channel for silicon pixel detectors, developed by the PixFEL collaboration in view of future X-ray Free Electron Laser (FEL) applications. The circuit, fabricated in a 65 nm CMOS technology by TSMC, has been designed to deal with a maximum input signal of 104 photons with energy from 1 keV to 10 keV, by exploiting...
This work presents the design of a read-out channel suitable for application to silicon pixel detectors for the next generation Free Electron Laser (FEL) experiments. The readout architecture, which has been carried out in a 65 nm CMOS technology, consists of a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaping stage and a low-power analog-to-digital...
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