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This paper is concerned with the study of the total ionizing dose (TID) effects in NMOS transistors belonging to 90 and 65 nm CMOS technologies from different manufacturers. Results from static and noise measurements are used to collect further evidence for a static and noise degradation model involving charge buildup in shallow trench isolations and lateral parasitic transistor activation. Comparison...
This work presents an extensive analysis of the analog properties, in particular in terms of noise performance, of MOSFET devices belonging to a 65 nm low power CMOS technology exposed to ionizing radiation. The behavior of the 1/f and white noise terms is studied as a function of the main device parameters before and after exposure to 10 keV X-rays and 60Co γ-rays. The results provide a valuable...
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