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In this paper the design of a voltage-mode switching mode amplifier in a 65-nm CMOS process in the GHz range is described. The amplifier can be operated with a rectangular drive signal with 50 % duty cycle up to 4 GHz and pseudo random bit sequences up to 4 GBit/s. The calibrated broadband PAE of the amplifier chip is 22 % at 2 GHz, 13 % at 3 GHz and 7 % at 4 GHz for a rectangular drive signal with...
A continuous-time bandpass delta-sigma modulator (CT BDSM) is designed and fabricated in a SiGe bipolar transistor technology with a transit frequency of 200 GHz. The modulator can be tuned in its center frequency from 1.55 GHz up to 2.45 GHz for mobile base station applications. To drive a GaN high power amplifier a driver amplifier is presented using a complementary bipolar transistor technology.
This paper presents a 4th order continuous-time bandpass delta-sigma modulator (CT-BPDSM) with a programmable center frequency ranging from 1.55 GHz to 2.45 GHz. The modulator is suited to be applied in multistandard class-S power amplifiers. The circuit features a multifeedback architecture with return-to-zero (RZ) and half-return-to-zero (HRZ) pulses. The loop filters consist of LC-resonators with...
After a short introduction to the technique of high voltage circuit-breakers, their most popular drives and the ways to test them are presented. Afterwards the investigated test drive is introduced, as well as the design and realisation of the experiment. It is shown, that the drive is an efficient system, which possesses exceeding hydraulic edge conditions. Despite extreme climatic circumstances,...
The conducted EMC behavior of a single phase PFC converter operating in boundary conduction mode is predicted by an analytical simulation process. The simulation routines are very flexible in use allowing also for simulation of switching frequency limitations, valley switching and valley skipping. The straight forward simulation process for differential mode disturbances including all blocks of the...
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