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In view of the realization of high efficiency four-junction solar cells, InGaP layers, lattice matched to InGaAs, and (001) 6° off Ge substrate are grown by low pressure MOCVD at growth temperatures as low as 500°C. The grown samples are undoped, p-type (doped by Zn) and n-type (doped by Te) materials with thickness around 1μm. The ternary compound composition and structural properties are analysed...
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